parameter symbol value unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5 v collector current i c 8.0 a base current i b 0.2 a total dissipation at p tot 60 w max. operating junction temperature t j 150 o c storage temperature t stg -55~150 o c BDX53C / bdx54c description parameter symbol test conditions min. typ. max. unit collector cut-off current i cbo v cb =100v, i e =0 0.2 ma collector cut-off current i ceo v ce =50v, i b =0 0.5 ma emitter cut-off current i ebo v eb =5.0v, i c =0 2.0 ma collector-emitter sustaining voltage v ceo i c =100ma, i b =0 100 v dc current gain h fe v ce =3v, i c =3.0a 750 collector-emitter saturation voltage v ce(sat) i c =3.0a,i b =12ma 2.0 v base-emitter saturation voltage v be(sat) i c =3.0a,i b =12ma 2.5 v parallel-diode forward voltage v f i f =3a 2.5 v complementary silicon power darlington ttransistors product specification the BDX53C are silicon epitaxial-base npn power transistors in monolithic darlington configuration mounted in jedec to-220 plastic package. they are intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. the complementary pnp types are bdx54c respectively. electrical characteristics absolute maximum ratings( ta = 25 c) o ( ta = 25 c) o to-220 tiger electronic co.,ltd
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